Oscillating Nernst-Ettingshausen effect in bismuth across the quantum limit

被引:83
作者
Behnia, Kamran
Measson, Marie-Aude
Kopelevich, Yakov
机构
[1] ESPCI, CNRS, Phys Quant Lab, F-75231 Paris, France
[2] Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan
[3] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil
关键词
D O I
10.1103/PhysRevLett.98.166602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In elemental bismuth, 10(5) atoms share a single itinerant electron. Therefore, a moderate magnetic field can confine electrons to the lowest Landau level. We report on the first study of metallic thermoelectricity in this regime. The main thermoelectric response is off-diagonal with an oscillating component several times larger than the nonoscillating background. When the first Landau level attains the Fermi energy, both the Nernst and the Ettingshausen coefficients sharply peak, and the latter attains a temperature-independent maximum. These features are yet to be understood. We note a qualitative agreement with a theory invoking current-carrying edge excitations.
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页数:4
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