High efficiency tunneling-regenerated multi-active region light emitting diodes

被引：3

作者：

Guo, X ^{[1
]}

Shen, GD ^{[1
]}

Wang, GH ^{[1
]}

Du, JY ^{[1
]}

Guo, WL ^{[1
]}

Gao, G ^{[1
]}

Zhu, WJ ^{[1
]}

Zou, DS ^{[1
]}

机构：

[1] Beijing Polytech Univ, Dept Elect Engn, Beijing 100022, Peoples R China

来源：

OPTOELECTRONIC MATERIALS AND DEVICES II | 2000年 / 4078卷

关键词：

quantum efficiency; multi-active region; LED;

D O I：

10.1117/12.392139

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new mechanism of tunneling-regenerated multi-active region LEDs with high quantum efficiency and high brightness has been presented. The layer structure, MOCVD growth, device technology, a several of measured curves and their analysis of these new mechanism LEDs were shown in the paper. It was theoretically and experimentally resulted in that the efficiency of the electro-luminescence and the on-axis luminous intensity can Linearly increase approximately with the number of the active regions.

引用

页码：170 / 179

页数：10