Excimer laser etching of GaAs, AlxGa1-xAs and CuInSe2 in chlorine atmosphere

被引:5
作者
Zimmer, K
Dienelt, J
Herfurth, F
Braun, A
Otte, K
Lippold, G
Gottschalch, V
Bigl, F
机构
[1] Inst Surface Modificat, D-04318 Leipzig, Germany
[2] Univ Leipzig, Fac Phys, D-04103 Leipzig, Germany
[3] Univ Leipzig, Fac Chem, D-04103 Leipzig, Germany
关键词
laser-induced ticking; chlorine; laser processing; Raman scattering; CuInSe(2); Al(x)Ga(1-x)As;
D O I
10.1016/S0169-4332(97)00745-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have studied laser-induced etching (LIE) of GaAs and Al(x)Ga(1-x)As (x = 0.2, 0.66, 0.8) under chlorine atmosphere. In addition, LIE, applied to CuInSe(2) for the first time, was investigated with respect to surface damage production and surface roughness at various laser energy densities. It was found that the etch rates of Al(x)Ga(1-x)As are higher than that of GaAs at the same fluence increasing almost linearly with laser fluence. However, the etch threshold for of Al(x)Ga(1-x)As (55 mJ/cm(2)) is lower than of GaAs (85 mJ/cm(2)). It could be observed that the background pressure of H(2)O and O(2) have no influence on the etch threshold of GaAs and Al(x)Ga(1-x)As during LIE with Cl(2) as reactive gas. Etching of CuInSe(2) shows a complex etch rate dependence suggesting a combination of chemical and physical processes at the surface. Raman scattering was used to show that the surface stoichiometry of CuInSe(2) can be varied from In-rich to Cu-rich by changing different laser parameters. However, in all cases there is crystal damage near the surface of the substrate. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:800 / 804
页数:5
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