A coupled finite element model for the sublimation growth of SiC

被引：16

作者：

Raback, P

Nieminen, R

Yakimova, R

Tuominen, M

Janzen, E

机构：

[1] Ctr Comp Sci, FIN-02101 Espoo, Finland

[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[3] Outokumpu Semitron, S-17824 Eckero, Sweden

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

crystal growth; mathematical modeling; finite element method;

D O I：

10.4028/www.scientific.net/MSF.264-268.65

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper a finite element model for the sublimation growth process is represented. It involves several coupled differential equations that are solved in different grids. The growing surface is modeled using a pseudo dynamic approach where the grid is altered to account for the changes in the geometry.

引用

页码：65 / 68

页数：4

共 5 条

[1] AN INTEGRATED PROCESS MODEL FOR THE GROWTH OF OXIDE CRYSTALS BY THE CZOCHRALSKI METHOD [J].