Monovacancy and interstitial migration in ion-implanted silicon

被引：17

作者：

Coleman, P. G. ^{[1
]}

Burrows, C. P. ^{[1
]}

机构：

[1] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.98.265502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The migration of monovacancies (V-0) and self-interstitials (I) has been observed in ion-implanted low-doped float-zone silicon by variable-energy positron annihilation spectroscopy. V-0 and I were created by the in situ implantation of similar to 20 keV helium ions below 50 K. Monitoring the time evolution of the vacancy response during isothermal heating enabled the measurement of activation energies for V-0 and I migration of 0.078(7) and 0.46(28) eV, respectively. In highly As-doped Si, partial V annihilation occurs via free I migration, with a second stage of annealing, probably associated with V-As complexes, above room temperature.

引用

收藏

页数：4

相关论文

共 30 条

[1] CHARACTERIZATION OF DEFECTS IN SI AND SIO2-SI USING POSITRONS [J].

ASOKAKUMAR, P ;

LYNN, KG ;

WELCH, DO .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) :4935-4982

[2] Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy [J].

Brusa, RS ;

Karwasz, GP ;

Tiengo, N ;

Zecca, A ;

Corni, F ;

Tonini, R ;

Ottaviani, G .

PHYSICAL REVIEW B, 2000, 61 (15) :10154-10166

[3] A COMPUTER-CONTROLLED SYSTEM FOR SLOW POSITION IMPLANTATION SPECTROSCOPY [J].

CHILTON, NB ;

COLEMAN, PG .

MEASUREMENT SCIENCE AND TECHNOLOGY, 1995, 6 (01) :53-59

[4] Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe [J].

Coleman, PG ;

Knights, AP ;

Gwilliam, RM .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :5988-5992

[5] Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon [J].

Coleman, PG ;

Burrows, CP ;

Knights, AP .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :947-949

[6] Helium-implanted silicon: A study of bubble precursors [J].

Corni, F ;

Calzolari, G ;

Frabboni, S ;

Nobili, C ;

Ottaviani, G ;

Tonini, R ;

Cerofolini, GF ;

Leone, D ;

Servidori, M ;

Brusa, RS ;

Karwasz, GP ;

Tiengo, N ;

Zecca, A .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) :1401-1408

[7] Migration energy for the silicon self-interstitial [J].

Hallén, A ;

Keskitalo, N ;

Josyula, L ;

Svensson, BG .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :214-216

[8] Recent advances in the application of slow positron beams to the study of ion implantation defects in silicon [J].

Knights, AP ;

Coleman, PG .

DEFECTS AND DIFFUSION IN SEMICONDUCTORS: ANNUAL RETROSPECTIVE III, 2000, 183-1 :41-52

[9]

Krause-Rehberg R., 1999, POSITRON ANNIHILATIO, V127

[10] Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments [J].

Lazanu, S ;

Lazanu, I .

PHYSICA SCRIPTA, 2004, 69 (05) :376-384