Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells

被引：13

作者：

Rech, B ^{[1
]}

Wieder, S ^{[1
]}

Beneking, C ^{[1
]}

Loffl, A ^{[1
]}

Kluth, O ^{[1
]}

Reetz, W ^{[1
]}

Wagner, H ^{[1
]}

机构：

[1] Forschungszentrum Julich, ISI, PV, D-52425 Julich, Germany

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654165

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper treats the use of texture etched ZnO:Al films in amorphous silicon solar cells. Chemically textured ZnO:Al films were implemented as a front TCO in p-i-n (superstrate) and n-i-p (substrate) solar cells, and in combination with Ag as a textured back reflector in n-i-p (substrate) solar cells. These cells exhibit excellent optical and light-trapping properties demonstrated by high short-circuit current densities. Adapted microcrystalline p-layers solve the ZnO/p-contact problem and thereby provide high fill factors and open-circuit voltages. The initial efficiencies so far obtained are close to 10 % for p-i-n and 8 % for n-i-p solar cells.

引用

页码：619 / 622

页数：4