Interplane coupling in the quasi-two-dimensional 1T-TaS2 -: art. no. 125105

被引:59
作者
Bovet, M [1 ]
van Smaalen, S
Berger, H
Gaal, R
Forró, L
Schlapbach, L
Aebi, P
机构
[1] Univ Fribourg, Dept Phys, CH-1700 Fribourg, Switzerland
[2] Univ Bayreuth, Crystallog Lab, D-95440 Bayreuth, Germany
[3] Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1103/PhysRevB.67.125105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Density-functional band-structure calculations including atomic displacements in the charge-density wave phase have been performed for the layered 1T-TaS2. This quasi-two-dimensional material exhibits a charge-density wave extending in all three dimensions. We find that the topmost occupied Ta d band is localized in plane but strongly disperses perpendicular to the layers showing favorable nesting conditions in z direction. The calculations are compared to angle-resolved photoemission experiments and possible consequences on the temperature behavior of the resistivity are discussed.
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页数:5
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