Interface formation between ultrathin films of titanium and (0001) sapphire substrates

被引：14

作者：

Bernath, S

Wagner, T

Hofmann, S

Ruhle, M

机构：

[1] Max Planck Inst Met Forsch, D-70174 Stuttgart, Germany

[2] Natl Res Inst Met, Tsukuba Labs, Tsukuba, Ibaraki 305, Japan

来源：

SURFACE SCIENCE | 1998年 / 400卷 / 1-3期

关键词：

in-situ Auger electron spectroscopy; interface reaction; molecular beam epitaxy; sapphire (0001); surface reduction; thin film; titanium; titanium oxide;

D O I：

10.1016/S0039-6028(97)00890-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of ultrathin films of titanium (less than or equal to 2 monolayers) on the (0001) plane of sapphire at room temperature was investigated by in-situ Auger electron spectroscopy. Quantification of experimental measurements showed that the interface between titanium and sapphire was composed of a suboxide of titanium and partially reduced aluminium oxide. interface formation starred with the appearance of a Ti2O3-type phase, which led to pure titanium with increasing film thickness. (C) 1998 Elsevier Science B.V.

引用

页码：335 / 344

页数：10

共 25 条

[1] ADSORBED LAYER AND THIN-FILM GROWTH MODES MONITORED BY AUGER-ELECTRON SPECTROSCOPY [J].