Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

被引：110

作者：

Wu, N

Zhang, QC

Zhu, CX

Chan, DSH

Li, MF

Balasubramanian, N

Chin, A

Kwong, DL

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[2] Inst Microelect, Singapore 117685, Singapore

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[4] Univ Texas, Dept Elect & Comp Engn, Austin, TX USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 18期

关键词：

D O I：

10.1063/1.1812835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An alternative surface passivation process for high-k Ge metal-oxide-semiconductor (MOS) device has been studied. The surface SiH4 annealing was implemented prior to HfO2 deposition. X-ray photoelectron spectroscopy analysis results show that the SiH4 surface passivation can greatly prevent the formation of unstable germanium oxide at the surface and suppress the Ge out-diffusion after the HfO2 deposition. The electrical measurement shows that an equivalent oxide thickness of 13.5 Angstrom and a leakage current of 1.16x10(-5) A/cm(2) at 1 V gate bias was achieved for TaN/HfO2/Ge MOS capacitors with the SiH4 surface treatment. (C) 2004 American Institute of Physics.

引用

页码：4127 / 4129

页数：3

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