Process parameters optimization for TiN and TiC formation using reactive ion beam assisted deposition

Titanium was evaporated in an atmosphere of nitrogen and/or acethylene onto various substrates at ambient temperature. During deposition it was irradiated with 30 keV energy N-2 ions. The composition of the films was studied using secondary neutral mass spectroscopy. Process parameters optimization was carried out to obtain stoichiometric TiN and TiC. The main result obtained was that TiN can be formed by deposition of Ti in reactive atmosphere of N-2 gas, even without ion bombardment. Whereas to form pure TiC in reactive atmosphere of C2H2, ion assistance is necessary. The rule of ion bombardment in the mechanism of TiC formation is to remove oxygen from the film. Scratch tests were carried out on coated and uncoated syalon samples. The films were also used as hard coatings for motor parts made in Ti-alloy. (C) 1998 Elsevier Science S.A.