Resolution limit of negative tone chemically amplified resist used for hybrid lithography:: Influence of the molecular weight

被引：20

作者：

Pain, L

Higgins, C

Scarfoglière, B

Tedesco, S

Dal'Zotto, B

Gourgon, C

Ribeiro, M

Kusumoto, T

Suetsugu, M

Hanawa, R

机构：

[1] CEA, LETI, F-38054 Grenoble 9, France

[2] CNRS, LTM, F-38054 Grenoble, France

[3] Lab Thermodynam Solut & Polymeres, F-63177 Clermont Ferrand, France

[4] Sumitomo Chem Co Ltd, Fine Chem Res Lab, Osaka 5548558, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期

关键词：

D O I：

10.1116/1.1321288

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The objective of this article was to study the resolution limits of different negative tune chemically amplified resists from both commercial and experimental formulations. Process optimization has been done on all samples and this work underlines the importance of the choice of bake temperature to push resists to their ultimate resolution. Furthermore, the influence of several compounds, such as the polymer matrix blend, molecular weight, and photoacid compound, is detailed to determine the influence of each parameter on the final formulation performance. (C) 2000 American Vacuum Society. [S0734-211X(00)12606-X].

引用

页码：3388 / 3395

页数：8

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