Fabrication approach for molecular memory arrays

被引:153
作者
Li, C [1 ]
Zhang, DH
Liu, XL
Han, S
Tang, T
Zhou, CW
Fan, W
Koehne, J
Han, J
Meyyappan, M
Rawlett, AM
Price, DW
Tour, JM
机构
[1] Univ So Calif, Dept EE Electrophys, Los Angeles, CA 90089 USA
[2] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA
[3] Rice Univ, Dept Chem, Houston, TX 77005 USA
[4] Rice Univ, Ctr Nanoscale Sci & Technol, Houston, TX 77005 USA
[5] Eloret Corp, Sunnyvale, CA 94087 USA
关键词
D O I
10.1063/1.1541943
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an approach to tackle long-standing problems in contacts, thermal damage, pinhole induced short circuits and interconnects in molecular electronic device fabrication and integration. Our approach uses metallic nanowires as top electrodes to connect and interconnect molecular wires assembled on electrode arrays in crossbar architectures. Using this simple and reliable approach, we have revealed intriguing memory effects for several different molecular wires, and demonstrated their applications in molecular memory arrays. Our approach has great potential to be used for fast screening of molecular wire candidates and construction of molecular devices. (C) 2003 American Institute of Physics.
引用
收藏
页码:645 / 647
页数:3
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