Electrical microcharacterization of dislocation-related charges in GaN-based single layers by scanning probe microscopy techniques

被引：19

作者：

Krtschil, A ^{[1
]}

Dadgar, A ^{[1
]}

Krost, A ^{[1
]}

机构：

[1] Otto Von Guericke Univ, Inst Expt Phys, D-39016 Magdeburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷

关键词：

atomic force microscopy; defects; surfaces; nitrides;

D O I：

10.1016/S0022-0248(02)01933-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Threading dislocations in differently doped GaN single I avers grown by metal organic vapor phase epitaxy on (0001) sapphire were investigated by; tapping-mode atomic force microscope (AFM) mid h scanning surface potential microscopy (SSPM) kith respect to their local electrical properties. In M-doped and in some undoped GaN layers, surface potential variations Of about 0.1 V due to additional negative Coulomb charges appear around the dislocation,, surface intersections. In contrast. in Si-doped and in some other undoped layers. the Surface pits are electrically neutral without any systematic surface potential signal. These differences in charge stale are attributed to decoration effects of the dislocation core with other defects. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：542 / 547

页数：6

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