Growth of InI single crystals for nuclear detection applications

被引：15

作者：

Bhattacharya, P. ^{[1
]}

Groza, M. ^{[1
]}

Cui, Y. ^{[1
]}

Caudel, D. ^{[1
]}

Wrenn, T. ^{[1
]}

Nwankwo, A. ^{[1
]}

Burger, A. ^{[1
]}

Slack, G. ^{[2
]}

Ostrogorsky, A. G. ^{[2
]}

机构：

[1] Fisk Univ, Nashville, TN 37208 USA

[2] Rensselaer Polytech Inst, Troy, NY 12180 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 08期

基金：

美国国家科学基金会;

关键词：

Characterizations; Bridgman growth; Halides; Semiconducting indium compound;

D O I：

10.1016/j.jcrysgro.2009.12.021

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have developed a procedure to purify, synthesize and grow InI single crystals using the Bridgman technique. The commercial product of InI from Alfa Aesar (99.998% InI or 4 N) was zone refined by 50 passes of a zone-heater at 420 degrees C, traveling at 2 cm/h (the melting point of InI is 360 degrees C). InI was also synthesized using high purity In and I-2 by vapor transport technique. The grown InI single crystal showed a clear band edge excitonic emission around 2.02 eV at 6 K using photoluminescence ;measurement. The resistivities of InI detectors were found to be similar to 2 x 10(9) and 1 x 10(8) Omega cm for zone refined and vapor synthesized starting materials, respectively. The InI detector formed by Pd-Pd contact showed clear peak of alpha particle detection at room temperature using Am-241 source. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1228 / 1232

页数：5

共 6 条

[1]

Hubbell J.H., 1987, XCOM PHOTON CROSS SE

[2] THE CRYSTAL STRUCTURE OF INDIUM (I) IODIDE [J].