A study of ion beam etching of polymethylmethacrylate using N2 and Na/O2-mixtures

被引:2
作者
Taguchi, K [1 ]
Ueguchi, T [1 ]
Ikeda, M [1 ]
机构
[1] Fukuyama Univ, Fac Engn, Fukuyama, Hiroshima 7290292, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 9A期
关键词
ion beam etching; PMMA; temperature; smooth surface; vertical side wall;
D O I
10.1143/JJAP.39.5358
中图分类号
O59 [应用物理学];
学科分类号
摘要
The influence of process parameters such as gas composition, kinetic energy of the ions and sample temperatures was studied in order to discuss the dry etching mechanism of polymers. First, we investigated polymer dry etching using N-2 gas and verified that the heating temperature was the critical parameter in the case of polymer dry etching. Next, polymer dry etching was carried out using N-2-O-2 gas for obtaining smooth vertical side walls. The experimental results revealed that the generation of neutralized reactive species needed to be suppressed to form smooth vertical side walls.
引用
收藏
页码:5358 / 5359
页数:2
相关论文
共 2 条
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Oku, S ;
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Ochiai, K .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (04) :585-591
[2]  
Yanagisawa K., 1997, Transactions of the Institute of Electrical Engineers of Japan, Part E, V117-E, P39, DOI 10.1541/ieejsmas.117.39