High energy irradiation properties of CdTe/CdS solar cells

被引：10

作者：

Bätzner, DL ^{[1
]}

Romeo, A ^{[1
]}

Döbeli, M ^{[1
]}

Weinert, K ^{[1
]}

Zogg, H ^{[1
]}

Tiwari, AN ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Swiss Fed Inst Technol, Lab Solid State Phys, Thin Film Grp, CH-8005 Zurich, Switzerland

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190766

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The irradiation hardness of CdTe solar cells was investigated for extremely high fluence of protons (up to 10(14) cm(-2)) and electrons (up to 10(18) cm(-2)) since the degradation onset occurs at very high fluences. One general degradation characteristic for CdTe cells was calculated using a damage dose formulation, allowing a comprehensive comparison with other cell technologies. CdTe cells show an excellent radiation stability, superior to monocrystalline cells and also slightly superior to other thin film cells. Changes in the cell parameters are quantitatively correlated to recombination centres. For proton irradiation, a passivation of recombination centres at low and medium fluences is observed causing even an increases the efficiency. The damage recovery of CdTe cells shows an exponential time dependence.

引用

页码：982 / 985

页数：4

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