Defect chemistry of langasite III: Predictions of electrical and gravimetric properties and application to operation of high temperature crystal microbalance

The electrical and gravimetric properties of langasite, La3Ga5SiO14, are related to its underlying defect and transport processes via previously developed predictive defect and transport models. These models are used here to calculate the dependence of the partial ionic and electronic conductivities and the mass change for langasite as functions of temperature, dopant type and level and pO(2). Doping strategies devised for minimizing conductivity in langasite based on use conditions are described. For example, the required dopant level to achieve minimum conductivity and thus minimum electrical losses in acceptor-doped langasite is shown to depend on the operating pO(2). Likewise intrinsic mass changes in langasite, dependent on dopant level, pO(2) and temperatures, if high enough, can mask mass changes induced in active layers applied to langasite when used as a microbalance. For example, the model predicts that the dopant level in donor-doped langasite has less of an impact on intrinsic mass change due to external environmental changes when compared to acceptor-doped langasite. The models are also applied in defining acceptable operating limits needed to achieve and/or the design of properties for desired levels of microbalance resolution and sensitivity.