Controlled normal and inverse current-induced magnetization switching and magnetoresistance in magnetic nanopillars

被引：62

作者：

AlHajDarwish, M ^{[1
]}

Kurt, H

Urazhdin, S

Fert, A

Loloee, R

Pratt, WP

Bass, J

机构：

[1] Michigan State Univ, Ctr Fundamental Mat Res, Ctr Sensor Mat, Dept Phys & Astron, E Lansing, MI 48824 USA

[2] Univ Paris 11, F-91404 Orsay, France

[3] CNRS THALES, Unite Mixte Phys, F-91404 Orsay, France

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.93.157203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By combining pairs of ferromagnetic metals with the same or different signs of scattering anisotropies in ferromagnetic-nonmagnetic-ferromagnetic metal nanopillars, we independently invert just the magnetoresistance, just the direction of current-induced magnetization switching, or both together, at room temperature (295 K) and at 4.2 K. In all cases studied, the switching direction is correctly predicted from the net scattering anisotropy of the fixed ferromagnet, including both bulk and interfacial contributions.

引用

页码：157203 / 1

页数：4

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