Mo incorporation in WO3 thin film photoanodes: Tailoring the electronic structure for photoelectrochemical hydrogen production

被引：23

作者：

Baer, M. ^{[1
,2
]}

Weinhardt, L. ^{[1
,3
]}

Marsen, B. ^{[2
,4
]}

Cole, B. ^{[4
]}

Gaillard, N. ^{[4
]}

Miller, E. ^{[4
]}

Heske, C. ^{[1
]}

机构：

[1] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA

[2] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

[3] Univ Wurzburg, D-97074 Wurzburg, Germany

[4] Univ Hawaii, Hawaii Nat Energy Inst, Honolulu, HI 96822 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 03期

关键词：

conduction bands; molybdenum; photoelectrochemistry; photoemission; thin films; tungsten compounds; valence bands; TUNGSTEN-OXIDE FILMS; WATER; POSITIONS;

D O I：

10.1063/1.3291689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic surface structure of Mo-incorporated WO3 ("WO3:Mo") is investigated using direct and inverse photoemission and compared to that of pure (Mo-free) WO3. The films are found to be n-type with an electronic surface band gap of 3.27 (+/- 0.15) eV. The conduction band minimum (valence band maximum) is 0.64 (+/- 0.10) eV above [2.63 (+/- 0.10) eV below] the Fermi level and at most 0.38 (+/- 0.11) eV above the H+/H-2 reduction potential [at least 1.66 (+/- 0.11) eV below the H2O/O-2 oxidation potential]. The findings suggest an explanation why WO3:Mo/WO3 bilayer structures show improved photoelectrochemical performance compared to respective single layer photoanodes.

引用

页数：3

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