Structural, optical and electrical studies on spray deposited highly oriented ZnO films

被引:108
作者
Lokhande, BJ [1 ]
Uplane, MD [1 ]
机构
[1] Shivaji Univ, Dept Elect, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India
关键词
semiconductor; zinc oxide; characterization;
D O I
10.1016/S0169-4332(00)00533-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin films of Zinc oxide (ZnO) have been prepared on glass substrates by spray pyrolysis techniques using 0.025 M aqueous solution of Zinc acetate. X-ray diffract ion (XRD) reveals that the films are polycrystalline in nature having hexagonal wurtzite type crystal structure. The room temperature resistivity is of the order of 10(-1) Omega cm. Estimated band gap energy from optical absorption data is around 3.27 eV. Thermoemf measurements show that films are of n-type. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:243 / 246
页数:4
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