Preparation and characterization of indium oxide (In2O3) films by activated reactive evaporation

被引：7

作者：

Benoy, MD ^{[1
]}

Pradeep, B ^{[1
]}

机构：

[1] Cochin Univ Sci & Technol, Dept Phys, Kochi, Kerala, India

来源：

BULLETIN OF MATERIALS SCIENCE | 1997年 / 20卷 / 08期

关键词：

thin films; semiconductors; oxides; evaporation method;

D O I：

10.1007/BF02745053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and optical properties of In2O3 films prepared at room temperature by activated reactive evaporation have been studied. Hall effect measurements at room temperature show that the films have a relatively high mobility 15 cm(2)v(-1)s(-1), high carrier concentration 2.97 x 10(20)/cm(3), with a low resistivity rho = 1.35 x 10(-3) ohm cm. As-prepared him is polycrystalline. It shows both direct and indirect allowed transitions with band gaps of 3.52 eV and 2.94eV respectively.

引用

页码：1029 / 1038

页数：10

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