Comparative study of hexagonal and cubic GaN growth by RF-MBE

被引：13

作者：

Feuillet, G

Widmann, F

Daudin, B

Schuler, J

Arlery, M

Rouviere, JL

Pelekanos, N

Briot, O

机构：

[1] CEA Grenoble, SP2M PSC, Dept Rech Fondamentale Mat Condensee, F-38041 Grenoble 9, France

[2] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 50卷 / 1-3期

关键词：

hexagonal GaN growth; cubic GaN growth; RF-MBE;

D O I：

10.1016/S0921-5107(97)00179-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The epitaxial growth of both cubic and hexagonal GaN epilayers is considered here with the aim of comparing their physical properties. In particular, the growth mechanisms at the first stages of growth will be dealt with together with the quality of the growth front. The optical characteristics of the epilayers will be compared by reference to the structure of the defects present within the different types of layers. (C) 1997 Elsevier Science S.A.

引用

页码：233 / 237

页数：5

共 8 条

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