Efficient charge extraction and slow recombination in organic-inorganic perovskites capped with semiconducting single-walled carbon nanotubes

被引:119
作者
Ihly, Rachelle [1 ]
Dowgiallo, Anne-Marie [1 ]
Yang, Mengjin [1 ]
Schulz, Philip [1 ]
Stanton, Noah J. [1 ]
Reid, Obadiah G. [1 ]
Ferguson, Andrew J. [1 ]
Zhu, Kai [1 ]
Berry, Joseph J. [1 ]
Blackburn, Jeffrey L. [1 ]
机构
[1] Natl Renewable Energy Lab, Chem & Mat Sci Ctr, Golden, CO 80401 USA
关键词
HYBRID SOLAR-CELLS; LEAD IODIDE; HALIDE PEROVSKITES; DYNAMICS; ELECTRON; HYSTERESIS; GENERATION;
D O I
10.1039/c5ee03806e
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Metal-halide based perovskite solar cells have rapidly emerged as a promising alternative to traditional inorganic and thin-film photovoltaics. Although charge transport layers are used on either side of perovskite absorber layers to extract photogenerated electrons and holes, the time scales for charge extraction and recombination are poorly understood. Ideal charge transport layers should facilitate large discrepancies between charge extraction and recombination rates. Here, we demonstrate that highly enriched semiconducting single-walled carbon nanotube (SWCNT) films enable rapid (sub-picosecond) hole extraction from a prototypical perovskite absorber layer and extremely slow back-transfer and recombination (hundreds of microseconds). The energetically narrow and distinct spectroscopic signatures for charges within these SWCNT thin films enables the unambiguous temporal tracking of each charge carrier with time-resolved spectroscopies covering many decades of time. The efficient hole extraction by the SWCNT layer also improves electron extraction by the compact titanium dioxide electron transport layer, which should reduce charge accumulation at each critical interface. Finally, we demonstrate that the use of thin interface layers of semiconducting single-walled carbon nanotubes between the perovskite absorber layer and a prototypical hole transport layer improves device efficiency and stability, and reduces hysteresis.
引用
收藏
页码:1439 / 1449
页数:11
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