Microstructure of MgB2 films deposited on YSZ/Hastelloy substrate

被引：2

作者：

Hata, S ^{[1
]}

Sosiati, H

Tomokiyo, Y

Kuwano, N

Matsumoto, A

Fukutomi, M

Kitaguchi, H

Komori, K

Kumakura, H

机构：

[1] Kyushu Univ, Dept Engn Sci Elect & Mat, Kasuga, Fukuoka 8168580, Japan

[2] Kyushu Univ, Res Lab High Voltage Electron Microscopy, Fukuoka 8128581, Japan

[3] Kyushu Univ, Art Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan

[4] Natl Inst Mat Sci, Superconducting Mat Ctr, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF THE JAPAN INSTITUTE OF METALS | 2004年 / 68卷 / 09期

关键词：

MgB2; film; yttria-stabilized zirconia; Hastelloy; pulsed laser deposition; transmission electron microscopy; elemental mapping;

D O I：

10.2320/jinstmet.68.648

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Microstructures of MgB2 films on yttria-stabilized-zirconia (YSZ)/Hastelloy substrates were studied by analytical transmission electron microscopy. The MgB2 films with Mg- rich compositions were fabricated by pulsed laser deposition followed by annealing at 600degreesC or 680degreesC under Ar atmosphere. Fine grains of MgB2 and MgO crystals 5-30 nm in size that shows a good mutual connectivity are formed in the MgB2 films. The MgB2 films also form voids 5-100 nm in size that may contain amorphous or oxide phases. Two-dimensional elemental analyses revealed that Mg and O atoms are enriched near the MgB2/YSZ interface. From a comparison in microstructures between the 600degreesC- and 680degreesC-annealed MgB2 films, it is suggested that the films composed of finer grains of MgB2 exhibit a higher critical current density under high magnetic fields.

引用

页码：648 / 655

页数：8

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