Effect of light intensity on current collection in thin-film solar cells

被引：7

作者：

McMahon, TJ ^{[1
]}

von Roedern, B ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654106

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have measured the current-voltage curves of thin-film solar cells using focused laser spots (30 - 500 mu m) using DC and modulated (AC) photocurrent techniques. The AC short-circuit current response (I-SC) and the AC fill factors (FF) decrease for small spot sizes corresponding to several 100 sun light intensities. Laser line scans across the devices produced significant but reproducible spatial fluctuations in AC I-SC These spatial variations depend on spot size and are reduced by scanning with lower light intensity. The reduction of AC FF and AC I-SC was largest in a-Si:H, intermediate in CdTe and CuInSe2 (CIS), barely noticeable in some Cu(Ga,In)Se-2 (CIGS) cells and absent in a silicon cells. The observations on CIGS and some CIS cells can be explained by internal series resistance, but field dependent collection and recombination effects must be invoked to explain results on most thin-film solar cell materials. Such field modification is not accounted for in standard exponential diode equation models.

引用

页码：375 / 378

页数：4