Electronic structures of CeRhAs and CeRhSb

被引：6

作者：

Ishii, F ^{[1
]}

机构：

[1] Hiroshima Univ, Dept Quantum Matter, ADSM, Higashihiroshima 7398530, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 328卷 / 1-2期

关键词：

Kondo semiconductor; electronic structure; FLAPW method;

D O I：

10.1016/S0921-4526(02)01834-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have performed first-principles band structure calculations of epsilon-TiNiSi type CeRhAs and CeRhSb. Results of the calculations predict that the ground state of CeRhAs is insulating with an indirect band gap of 38 meV. On the other hand, the ground state of CeRhSb is semimetallic with anisotropic hole and electron pockets. Band structures near the Fermi energy and the origin of the band gap are discussed in detail. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：154 / 156

页数：3

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