A fully integrated 24-dBm CMOS power amplifier for 802.11 a WLAN applications

被引：26

作者：

Eo, YS ^{[1
]}

Lee, KD ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Kyonggi Do 449712, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2004年 / 14卷 / 11期

关键词：

complementery metal oxide semiconductor (CMOS) analog integrated circuit; power amplifier (PA); WLAN;

D O I：

10.1109/LMWC.2004.837080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated 24-dBm complementery metal oxide semiconductor (CMOS) power amplifier (PA) for 5-GHz WLAN applications is implemented using 0.18-mum CMOS foundry process. It consists of differential three-stage amplifiers and fully integrated input/output matching circuits. The amplifier shows a P-1 dB of 21.8 dBm, power added efficiency of 13%, and gain of 21 dB, respectively. The saturated output power is above 24.1 dBm. This shows the highest output power among the reported 5-GHz CMOS PAs as well as completely satisfying IEEE 802.11a transmitter back off requirement.

引用

页码：504 / 506

页数：3