Passively mode-locked diode-pumped surface-emitting semiconductor laser

被引：171

作者：

Hoogland, S ^{[1
]}

Dhanjal, S

Tropper, AC

Roberts, JS

Häring, R

Paschotta, R

Morier-Genoud, F

Keller, U

机构：

[1] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England

[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Cent Facil 3 5 Semicond, Sheffield S1 3JD, S Yorkshire, England

[3] ETH Honggerberg, HPT, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 09期

关键词：

diode-pumped laser; semiconductor laser; ultrashort pulses;

D O I：

10.1109/68.874213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror, The gain medium consists of a stack of 12 InGaAs/GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brightness diode laser. The mode-locked laser emits pulses of 22-ps full-width at half maximum duration at 1030 nm, with a repetition rate variable around 4.4 GHz.

引用

收藏

页码：1135 / 1137

页数：3

相关论文

共 11 条

[1]

AMAND T, 1998, FEMTOSECOND LASER PU

[2] Mode-locking at very high repetition rates more than terahertz in passively mode-locked distributed-Bragg-reflector laser diodes [J].

Arahira, S ;

Matsui, Y ;

Ogawa, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (07) :1211-1224

[3] Q-switching stability limits of continuous-wave passive mode locking [J].

Hönninger, C ;

Paschotta, R ;

Morier-Genoud, F ;

Moser, M ;

Keller, U .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1999, 16 (01) :46-56

[4] MODE-LOCKED GAAS VERTICAL CAVITY SURFACE EMITTING LASERS [J].

JIANG, WB ;

MIRIN, R ;

BOWERS, JE .

APPLIED PHYSICS LETTERS, 1992, 60 (06) :677-679

[5] SOLID-STATE LOW-LOSS INTRACAVITY SATURABLE ABSORBER FOR ND-YLF LASERS - AN ANTIRESONANT SEMICONDUCTOR FABRY-PEROT SATURABLE ABSORBER [J].

KELLER, U ;

MILLER, DAB ;

BOYD, GD ;

CHIU, TH ;

FERGUSON, JF ;

ASOM, MT .

OPTICS LETTERS, 1992, 17 (07) :505-507

[6] Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers [J].

Keller, U ;

Weingarten, KJ ;

Kartner, FX ;

Kopf, D ;

Braun, B ;

Jung, ID ;

Fluck, R ;

Honninger, C ;

Matuschek, N ;

derAu, JA .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (03) :435-453

[7] 29GHz modelocked miniature Nd:YVO4 laser [J].

Krainer, L ;

Paschotta, R ;

Spühler, G ;

Moser, M ;

Keller, U .

ELECTRONICS LETTERS, 1999, 35 (14) :1160-1161

[8] High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J].

Kuznetsov, M ;

Hakimi, F ;

Sprague, R ;

Mooradian, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (08) :1063-1065

[9] Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J].

Kuznetsov, M ;

Hakimi, F ;

Sprague, R ;

Mooradian, A .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) :561-573

[10] Wide-range tunable semiconductor lasers using asymmetric dual quantum wells [J].

Lee, BL ;

Lin, CF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (03) :322-324