Strain induced interface roughness of Si1-xCx delta layers on Si(001)

被引：5

作者：

Falta, J ^{[1
]}

Bahr, D ^{[1
]}

Hille, A ^{[1
]}

Materlik, G ^{[1
]}

Osten, HJ ^{[1
]}

机构：

[1] INST SEMICOND PHYS,D-15230 FRANKFURT,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 24期

关键词：

D O I：

10.1063/1.120380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultra thin buried S-C-1-x(x) films (delta layers) of monolayer thickness and high carbon concentration (x>0.1) in a Si matrix have been prepared by molecular beam epitaxy and were structurally characterized by high resolution x-ray diffraction, i.e., measurements of crystal truncation rods. The average interface roughness of the delta layers is in the order of 6-10 Angstrom. A larger carbon deposit results in the formation of thicker Si1-xCx delta layers with lower carbon concentrations and smoother interfaces. This effect is attributed to a reduction of the strain in the delta layer due to the lower carbon concentration. (C) 1997 American Institute of Physics. [S0003-6951(97)00150-2].

引用

页码：3525 / 3527

页数：3

共 15 条

[1] SCATTERING OF X-RAYS FROM CRYSTAL-SURFACES [J].