Silicon carbide powder synthesis by chemical vapour deposition from silane/acetylene reaction system

被引：38

作者：

Kavecky, S

Janeková, B

Madejová, J

Sajgalík, P

机构：

[1] Slovak Acad Sci, Inst Mat & Machine Mech, SK-83812 Bratislava, Slovakia

[2] Slovak Acad Sci, Inst Inorgan Chem, SK-84236 Bratislava, Slovakia

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2000年 / 20卷 / 12期

关键词：

chemical properties; CVD; grain size; powders; SiC;

D O I：

10.1016/S0955-2219(00)00071-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Amorphous fine silicon carbide powders have been prepared via the chemical vapour deposition from reaction mixture SiH4-C2H2 in a vertical tubular flow reactor in the temperature range 900-1250 degrees C. Powder particles prepared at temperature 1100 degrees C and C2H2/SiH4 mol ratio 1.2 are equiaxial, quasispherical and agglomerated. The mean particle size of the powder is approx. 0.1-0.2 mu m. The maximum agglomerate size is about 0.3 mu m. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1939 / 1946

页数：8

共 19 条

[1] Surface chemical species investigation by FT-IR spectrometry and surface modification of a nanosized SiCN powder synthesized via chemical vapor condensation [J].