Observation of the nucleation kinetics of Si quantum dots on SiO2 by energy filtered transmission electron microscopy

被引：22

作者：

Nicotra, G

Lombardo, S

Spinella, C

Ammendola, G

Gerardi, C

Demuro, C

机构：

[1] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy

[2] STMicroelectronics, Cent R&D, Catania Technol Ctr, I-95121 Catania, Italy

来源：

APPLIED SURFACE SCIENCE | 2003年 / 205卷 / 1-4期

关键词：

nucleation and growth; Si quantum dots; CVD; energy filtered TEM;

D O I：

10.1016/S0169-4332(02)01155-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The formation of Si quantum dots on SiO2 by chemical vapour deposition of SiH4 is investigated by energy filtered transmission electron microscopy. It is demonstrated that this technique allows to measure size distributions down to dimensions of about 1nm. This capability allows to put in evidence some important microscopic features of the nucleation process, whose consideration is fundamental to control the Si dot size. These aspects are shown and discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：304 / 308

页数：5

共 12 条

[1] Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices [J].