Temperature dependent spectral response measurements for III-V multi-junction solar cells

被引：27

作者：

Aiken, D ^{[1
]}

Stan, M ^{[1
]}

Murray, C ^{[1
]}

Sharps, P ^{[1
]}

Hills, J ^{[1
]}

Clevenger, B ^{[1
]}

机构：

[1] Emcore Photovoltaics, Albuquerque, NM 87123 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190704

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Temperature coefficients for the integrated current of all three subcells in a production InGaP/InGaAs/Ge solar cell structure have been measured at temperatures ranging from 5degreesC to 100degreesC. The InGaP, InGaAs, and germanium temperature coefficients are 0.011, 0.009, and 0.044 mA/cm(2)/degreesC, respectively. This-data can be used to design multi-junction solar cells for optimum performance at any specified operating temperature in this range. The predicted current mismatch for a similar triple junction operating at 100degreesC but designed to be current matched at 28degreesC is approximately 3%.

引用

页码：828 / 831

页数：4

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