Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s

被引：8

作者：

Furukawa, Y ^{[1
]}

Takao, H ^{[1
]}

Yamamoto, J ^{[1
]}

Furukawa, S ^{[1
]}

机构：

[1] Waseda Univ, Sch Sci & Engn, Dept Chem, Shinjuku Ku, Tokyo 1698555, Japan

来源：

SYNTHETIC METALS | 2003年 / 135卷 / 1-3期

关键词：

infrared and Raman spectroscopy; polythiophene and derivatives; metal-insulator-semiconductor diodes;

D O I：

10.1016/S0379-6779(02)00624-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Field-induced infrared absorption spectra from the metal-insulator-semiconductor diodes fabricated with regioregular poly(3-hexylthiophene) or poly(3-octylthiophene) have been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The obtained spectra have been attributed to positive polarons generated at the interface with the insulator (aluminum oxide) layer in the range of minus gate voltage.

引用

页码：341 / 342

页数：2

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