Diamond turning of silicon substrates in ductile-regime

被引:125
作者
Leung, TP
Lee, WB
Lu, XM
机构
[1] Hong Kong Polytech Univ, Dept Mfg Engn, Kowloon, Hong Kong
[2] Hong Kong Polytech Univ, Dept Mech Engn, Kowloon, Hong Kong
关键词
diamond turning; brittle materials; silicon single crystal; ductile-brittle transition; critical depth of cut;
D O I
10.1016/S0924-0136(97)00210-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicons are used in both wafer fabrication and infrared optics. Direct machining of silicon single crystal was carried out on a precision lathe equipped with an air spindle to a finish of 2.86 nm rms roughness. The success of the turning process depends on optimizing the machining parameters such as feed rate, depth of cut, tool rake angles, the cutting lubricants and the crystallographic orientation of the crystal being cut. It is shown that the commercial production of an optical surface on brittle materials is made possible by single point diamond turning. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:42 / 48
页数:7
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