Unconventional magnetoresistance in long InSb nanowires

被引：19

作者：

Zaitsev-Zotov, SV ^{[1
]}

Kumzerov, YA

Firsov, YA

Monceau, P

机构：

[1] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 101999, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Ctr Rech Tres Basses Temp, F-38042 Grenoble 9, France

来源：

JETP LETTERS | 2003年 / 77卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1567775

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1-1 mm) is studied in the temperature range 2.3-300 K. At zero magnetic field, the electric conduction G and the current-voltage characteristics of such wires obey the power laws G proportional to T-alpha, I proportional to V-beta, expected for one-dimensional electron systems. The effect of the magnetic field corresponds to a 20% growth of the exponents alpha, beta at H = 10 T. The observed magnetoresistance is caused by the magnetic-field-induced breaking of the spin-charge separation and represents a novel mechanism of magnetoresistance. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：135 / 139

页数：5

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