Perfect spatial ordering of self-organized InGaAs/AlGaAs box-like structure array on GaAs (311)B substrate with silicon nitride dot array

The metalorganic vapor phase epitaxial growth of strained InGaAs/AlGaAs box-like structure self-organized on GaAs (311)B substrate was investigated using fine silicon nitride (SIN) dot arrays for improving the controllability of self-organization phenomena. AlGaAs barrier layer grown at 750 similar to C buries SiN dots, forming novel pentagonally shaped hollows on (311)B substrate due to the (-100) facet growth and lateral growth. The In0.3Ga0.7As layer is preferentially grown in these hollows, then box-like structure is formed in these hollows during the growth interruption. Successive growth of AlGaAs/In0.3Ga0.7As epilayers induces the stacking of box-like structures just on top of the bottom boxes. The pairing probability of bottom and upper boxes is strongly dependent on the SiN dot array pitch, and the perfect spatial ordering of upper box arrays is achieved when the SiN dot pitch is in a range of 250-300 nm. This approach allows the exact positioning of self-formed box structure. (C) 1997 American Institute of Physics.