InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems

被引：8

作者：

Ziegler, V ^{[1
]}

Gässler, C ^{[1
]}

Wölk, C ^{[1
]}

Berlec, FJ ^{[1
]}

Deufel, R ^{[1
]}

Berg, M ^{[1
]}

Dickmann, J ^{[1
]}

Schumacher, H ^{[1
]}

Alekseev, E ^{[1
]}

Pavlidis, D ^{[1
]}

机构：

[1] Daimler Chrysler AG, Res Ctr Ulm, D-89081 Ulm, Germany

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of the InP-based PIN diode and HFET on one InP-substrate. Using these two devices, we integrated three different MMIC designs on one wafer: SPDT switch, phaseshifter and a combination of SPDT switch and LNA for a multifunctional MMIC.

引用

页码：341 / 344

页数：4

共 9 条

[1] 77GHz high-isolation coplanar transmit-receive switch using InGaAs/InP PIN diodes [J].

Alekseev, E ;

Pavlidis, D ;

Ziegler, V ;

Berg, M ;

Dickmann, J .

GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998, 1998, :177-180

[2]

Barsky M., 1999, 11 IND PHOSPH REL MA, P423

[3]

BENNETT J, 1999, EUROPEAN GALLIUM ARS, P63

[4] MM-wave HEMT based circuits and their system applications [J].

Dickmann, J ;

Berg, M ;

Ziegler, V ;

Wölk, C ;

Deufel, R .

SOLID-STATE ELECTRONICS, 1999, 43 (08) :1607-1612

[5]

GREILING P, 1999, EUROPEAN GALLIUM ARS, P563

[6]

LEKSEEV E, 1999, IND PHOSPH REL MAT C, P443

[7]

PUTNAM J, 1994, IEEE GAAS IC S, P333

[8] Low-power consumption InGaAs PIN diode switches for V-band applications [J].

Ziegler, V ;

Berg, M ;

Tobler, H ;

Woelk, C ;

Deufel, R ;

Trasser, A ;

Schumacher, H ;

Alekseev, E ;

Pavlidis, D ;

Dickmann, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (2B) :1208-1210

[9]

ZIEGLER V, 1998, EUROPEAN GALLIUM ARS, P127

← 1 →