CMP CoO reduction: slurry reprocessing

被引：19

作者：

Bibby, TFA ^{[1
]}

Adams, JA ^{[1
]}

Holland, K ^{[1
]}

Krulik, GA ^{[1
]}

Parikh, P ^{[1
]}

机构：

[1] IPEC, Planar, Phoenix, AZ 85034 USA

来源：

THIN SOLID FILMS | 1997年 / 308卷

关键词：

chemical mechanical planarization; oxide; slurry; reprocessing;

D O I：

10.1016/S0040-6090(97)00496-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Initial results of chemical mechanical planarization (CMP) of 8 inch diameter thermal oxide (TOX) and TEOS sheet film semiconductor wafers using CMP slurry that have been reprocessed are presented. The slurry is reprocessed in an on-line system that has been fitted onto an IPEC Planar model 472 CMP system. Slurry consumption during the testing was at one-fifth of normal CMP slurry consumption for the system. CMP results showed no differences between wafers polished with 100% fresh slurry and those polished with reprocessed slurry. (C) 1997 Elsevier Science S.A.

引用

页码：538 / 542

页数：5