共 16 条
Polycarbazole-based electrochemical transistor
被引:61
作者:
Rani, V
Santhanam, KSV
[1
]
机构:
[1] Tata Inst Fundamental Res, Chem Phys Grp, Mumbai 400005, India
[2] Banaras Hindu Univ, Inst Technol, Varanasi 221005, Uttar Pradesh, India
关键词:
transistor;
conducting polymer;
polycarbazole;
D O I:
10.1007/s100080050072
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
A polycarbazole conducting polymer transistor has been constructed having the dimensions 1 cm x 2 cm x 1 mm. Polycarbazole film used here has a redox potential of 1.30 V. Polymer-coated platinum plates were used as the source and drain. The inter-electrode spacing of the device is typically of the order of 200-500 mu m to minimise the internal resistance. The high saturation current region of the transistor in the most positive bias voltage (1.3 V), with negligible hysteresis and greater stability, appears to give a device that is superior to other conducting polymer transistors.
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页码:99 / 101
页数:3
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