Advantages of Al-free GaInP/InGaAs PHEMTs for power applications

The performance and temperature stability of Al-free GaInAs/GaAs PHEMTs with GaInP as a Schottky barrier is reported. GaInP/GaInAs/GaAs PHEMTs with a 1 mu m gate length show an f(max) value of 76 GHz with a maximum drain current of 570 mA/mm and a drain-source breakdown voltage of 16 V. Moreover, the first results on short gate length devices (0.15 mu m) yield f(T) and f(max) values of 106 and 203 GHz, respectively. In this case, the drain-source breakdown voltage is as high as 8 V. These results demonstrate the great potential of GaInP/GaInAs PHEMTs for power applications.