Semiconductor sensitization by microcrystals of MgIn2S4 on wide bandgap MgIn2O4

被引：30

作者：

Sirimanne, PM ^{[1
]}

Sonoyama, N ^{[1
]}

Sakata, T ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Elect Chem, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2000年 / 154卷 / 02期

关键词：

MgIn2O4; MgIn2S4; sulfurization; semiconductor sensitization;

D O I：

10.1006/jssc.2000.8867

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

MgIn2O4 was prepared by the solid state reaction of MgO and In2O3. Microcrystals of MgIn2S4 were formed on sintered MgIn2O4 pellets by sulfurizing them in a H2S atmosphere. The bandgap of MgIn2S4 was evaluated as 2.1 eV. A very high efficiency photocurrent was observed on MgIn2S4\MgIn2O4 electrodes. Photocurrent generation of MgIn2S4\MgIn2O4 electrodes was explained from the viewpoint of semiconductor sensitization. The flat band potential of MgIn2S4 was evaluated as -1.0 V vs Ag\AgCl in aqueous polysulfide redox electrolyte (1M OH-, 1 M S2-, 10(-2) M S). (C) 2000 Academic Press.

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页码：476 / 482

页数：7

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