Growth and properties of W-Si-N diffusion barriers deposited by chemical vapor deposition

We have used chemical vapor deposition to grow ternary tungsten based diffusion barriers to determine if they exhibit properties similar to those of sputter deposited ternaries. A range of different W-Si-N compositions were produced. The deposition temperature was low, 350 degrees C, and the precursors used are accepted by the industry. Deposition rates are acceptable for a diffusion barrier application. Resistivities range from 350 to 20000 mu Omega-cm, depending on composition. Step coverage of films with compositions expected to be of interest for diffusion barrier applications is 100%.