Relaxed InxGa1-xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs

被引：51

作者：

Bulsara, MT ^{[1
]}

Leitz, C ^{[1
]}

Fitzgerald, EA ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 13期

关键词：

D O I：

10.1063/1.121129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xAs structures with compositionally graded buffers were grown with organometallic vapor phase epitaxy on GaAs substrates and characterized with plan-view and cross-sectional transmission electron microscopy, atomic force microscopy, and x-ray diffraction. The results show that surface roughness experiences a maximum at growth temperatures where phase separation occurs in InxGa1-xAs. The strain fields from misfit dislocations induce this phase separation in the (110) directions, At growth temperatures above and below this temperature, the surface roughness is decreased significantly: however. only growth temperatures above this regime ensure nearly complete relaxed graded buffers with the most uniform composition caps. With the optimum growth temperature for-grading InxGa1-xAs determined to be 700 degrees C it was possible to produce In0.35Ga0.67As diode structures on GaAs with threading dislocation densities <8.5X10(6)/cm(2). (C) 1998 American Institute Physics.

引用

页码：1608 / 1610

页数：3

共 6 条

[1] Graded InxGa1-xAs/GaAs 1.3 μm wavelength light emitting diode structures grown with molecular beam epitaxy [J].