Fabrication and modeling of high-frequency PZT composite thick film membrane resonators

被引:29
作者
Duval, FFC [1 ]
Dorey, RA [1 ]
Wright, RW [1 ]
Huang, ZR [1 ]
Whatmore, RW [1 ]
机构
[1] Cranfield Univ, Sch Ind & Mfg Sci, Cranfield MK43 0AL, Beds, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1109/TUFFC.2004.1350953
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
High-frequency, thickness mode resonators were fabricated using a 7 mum piezoelectric transducer (PZT) thick film that was produced using a modified composite ceramic sol-gel process. Initial studies dealt with the integration of the PZT thick film onto the substrate. Zirconium oxide (ZrO2) was selected as a diffusion barrier layer and gave good results when used in conjunction with silicon oxide (SiO2) as an etch stop layer. Using these conditions, devices were produced and the acoustic properties measured and modeled. The resonators showed a resonant frequency of about 200 MHz, an effective electromechanical coupling coefficient of 0.34, and a Q factor of 22. Modeling was based on a Mason-type model that gave good agreement between the experimental data and the simulations. The latter showed, for the PZT thick film, an electromechanical coupling coefficient of 0.35, a stiffness of 8.65*10(10) N.m(-2) and an e(33,f) piezoelectric coefficient of 9 C.m(-2).
引用
收藏
页码:1255 / 1261
页数:7
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