Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

被引：174

作者：

Afanas'ev, VV

Stesmans, A

Ciobanu, F

Pensl, G

Cheong, KY

Dimitrijev, S

机构：

[1] Univ Leuven, Dept Phys, B-3000 Louvain, Belgium

[2] Univ Erlangen Nurnberg, Dept Appl Phys, D-91058 Erlangen, Germany

[3] Griffith Univ, Sch Microelect Engn, Nathan, Qld 411, Australia

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.1532103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O-2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation. (C) 2003 American Institute of Physics.

引用

页码：568 / 570

页数：3

共 21 条

[1] H-complexed oxygen vacancy in SiO2:: Energy level of a negatively charged state
Afanas'ev, VV
Stesmans, A
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (26) : 3844 - 3846
[2] Hole traps in oxide layers thermally grown on SiC
Afanas'ev, VV
Stesmans, A
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (15) : 2252 - 2254
[3] Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-azone cleaning
Afanas'ev, VV
Stesmans, A
Bassler, M
Pensl, G
Schulz, MJ
Harris, CI
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (15) : 2141 - 2143
[4] Interfacial defects in SiO2 revealed by photon stimulated tunneling of electrons
Afanas'ev, VV
Stesmans, A
[J]. PHYSICAL REVIEW LETTERS, 1997, 78 (12) : 2437 - 2440
[5] Afanas'ev VV, 1997, PHYS STATUS SOLIDI A, V162, P321, DOI 10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO
[6] 2-F
[7] Shallow electron traps at the 4H-SiC/SiO2 interface
Afanas'ev, VV
Stesmans, A
Bassler, M
Pensl, G
Schulz, MJ
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (03) : 336 - 338
[8] Band offsets and electronic structure of SiC/SiO2, interfaces
Afanas'ev, VV
Bassler, M
Pensl, G
Schulz, MJ
vonKamienski, ES
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (06) : 3108 - 3114
[9] Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
Chung, GY
Tin, CC
Williams, JR
McDonald, K
Di Ventra, M
Pantelides, ST
Feldman, LC
Weller, RA
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (13) : 1713 - 1715
[10] High-current, NO-annealed lateral 4H-SiC MOSFETs
Das, MK
Chung, GY
Williams, JR
Saks, NS
Lipkin, LA
Palmour, JW
[J]. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 981 - 984

← 1 2 3 →