Scalable RF Si MOSFET distributed lumped element model based on BSIM3v3

被引：5

作者：

Ho, MC ^{[1
]}

Brauchler, F ^{[1
]}

Yang, JY ^{[1
]}

机构：

[1] Texas Instruments Inc, Corp Res & Dev, Dallas, TX 75265 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 23期

关键词：

power MOSFET; lumped parameter networks;

D O I：

10.1049/el:19971316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A scalable distributed lumped element network model for Si MOSFETs is developed for RF power amplifier design. The model is based on BSIM3v3 developed by UC Berkeley and lossy transmission lines; s-parameter measurement up to 6GHz and power measurement at 900MHz are used for model validation.

引用

页码：1992 / 1993

页数：2

共 8 条

[1]

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Cheng, YH ;

Jeng, MC ;

Liu, ZH ;

Huang, JH ;

Chan, MS ;

Chen, K ;

Ko, PK ;

Hu, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (02) :277-287

[3]

COLLANTES JM, 1995, IEEE MTT-S, P1553, DOI 10.1109/MWSYM.1995.406271

[4]

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[5] PROPERTIES OF MICROSTRIP LINE ON SI-SIO2 SYSTEM [J].

HASEGAWA, H ;

FURUKAWA, M ;

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[6]

Ho MC, 1997, IEEE MTT-S, P391, DOI 10.1109/MWSYM.1997.602816

[7]

MILLER M, 1997, IEEE MTT S INT MICR, P19

[8]

Voinigescu SP, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P721, DOI 10.1109/IEDM.1995.499320

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