Effect of progressive substitution of La3+ by Bi3+ on the structure, magnetic and transport properties of La0.67Sr0.33Mno3

被引:33
作者
Cheng, ZX
Silver, TM
Li, AH
Wang, XL
Kimura, H
机构
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[2] Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia
基金
澳大利亚研究理事会;
关键词
CMR; bismuth; structure; ferromagnetic; resistance;
D O I
10.1016/j.jmmm.2004.05.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
yPolycrystalline La0.67-xBixSr0.33MnO3 (x = 0, 0.1, 0.2, 0.3 and 0.67) was prepared by solid-state reaction. The effects of La-substitution by Bi with a typical polarized lone pair electron character on the structure, magnetic and transport properties are presented. The results show that the polarized lone pair 6s(2) electrons have a dramatic effect on these properties. Structure refinements by the Rietveld method show that the substitution elongates the a- and c-axes, and eventually changes the structure from rhombohedral to tetragonal. At the same time, the elongated Mn3+-O-Mn4+ chain weakens the double exchange between adjacent Mn3+ and Mn4+ ions via the O bridge. As a consequence, the ferromagnetic coupling temperature decreases from 370 K down to 330 K as x increases to 0.3 from 0, and down to 270 K when La is totally replaced by Bi. With an increasing substitution level, the saturation moment (M-s) decreases from the near theory value of 3.67 muB down to 2.5 mu(B) for x = 0.3, and 0.08 mu(B) for the totally substituted sample. The sample with x = 0.67 shows a very weak ferromagnetic property. However, M-s should not change if only the unchanged Mn3+/Mn4+ ratio is considered in the La0.67-xBixSr0.33MnO3 system. The decrease in M-s can only be explained by an enhanced anti-ferromagnetic coupling that is simultaneous with the weakening of the ferroelectdc coupling by Bi. With increasing Bi content, the resistivity increases, and the temperature of the semiconductor to metallic transition also rises. Eventually the totally substituted sample becomes an insulator. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:143 / 149
页数:7
相关论文
共 11 条
[1]   Enhancement of the magneto resistance due to structural transition in Mg-doped perovskite Mn oxides [J].
Anane, A ;
Dupas, C ;
LeDang, K ;
Renard, JP ;
Veillet, P ;
Pinsard, L ;
Revcolevschi, A .
APPLIED PHYSICS LETTERS, 1996, 69 (08) :1160-1162
[2]   A STRUCTURAL PHASE-TRANSITION INDUCED BY AN EXTERNAL MAGNETIC-FIELD [J].
ASAMITSU, A ;
MORITOMO, Y ;
TOMIOKA, Y ;
ARIMA, T ;
TOKURA, Y .
NATURE, 1995, 373 (6513) :407-409
[3]   Magnetic and electrical properties of Bi1-xSrxMnO3: Hole-doping effect on ferromagnetic perovskite BiMnO3 [J].
Chiba, H ;
Atou, T ;
Syono, Y .
JOURNAL OF SOLID STATE CHEMISTRY, 1997, 132 (01) :139-143
[4]   CMR manganites: physics, thin films and devices [J].
Haghiri-Gosnet, AM ;
Renard, JP .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (08) :R127-R150
[5]   Pressure effects on the magnetoresistance in doped manganese perovskites [J].
Hwang, HY ;
Palstra, TTM ;
Cheong, SW ;
Batlogg, B .
PHYSICAL REVIEW B, 1995, 52 (21) :15046-15049
[6]   Ferromagnetism-induced reentrant structural transition and phase diagram of the lightly doped insulator La1-xSrxMnO3 (x<=0.17) [J].
Kawano, H ;
Kajimoto, R ;
Kubota, M ;
Yoshizawa, H .
PHYSICAL REVIEW B, 1996, 53 (22) :14709-14712
[7]   Preparation of α-MnO2 with an open tunnel [J].
Muraoka, Y ;
Chiba, H ;
Atou, T ;
Kikuchi, M ;
Hiraga, K ;
Syono, Y ;
Sugiyama, S ;
Yamamoto, S ;
Grenier, JC .
JOURNAL OF SOLID STATE CHEMISTRY, 1999, 144 (01) :136-142
[8]   Direct evidence for a half-metallic ferromagnet [J].
Park, JH ;
Vescovo, E ;
Kim, HJ ;
Kwon, C ;
Ramesh, R ;
Venkatesan, T .
NATURE, 1998, 392 (6678) :794-796
[9]   REVISED EFFECTIVE IONIC-RADII AND SYSTEMATIC STUDIES OF INTERATOMIC DISTANCES IN HALIDES AND CHALCOGENIDES [J].
SHANNON, RD .
ACTA CRYSTALLOGRAPHICA SECTION A, 1976, 32 (SEP1) :751-767
[10]   Weak ferromagnetism in LaMnO3 [J].
Skumryev, V ;
Ott, F ;
Coey, JMD ;
Anane, A ;
Renard, JP ;
Pinsard-Gaudart, L ;
Revcolevschi, A .
EUROPEAN PHYSICAL JOURNAL B, 1999, 11 (03) :401-406