1500 V, 4 amp 4H-SiC JBS diodes

被引：27

作者：

Singh, R ^{[1
]}

Ryu, SH ^{[1
]}

Palmour, JW ^{[1
]}

Hefner, AR ^{[1
]}

Lai, JS ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

SiC; Schottky; rectifier; reverse recovery;

D O I：

10.1109/ISPSD.2000.856782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the detailed design, fabrication and characterization of 1500 V, 4 Amp 4H-SiC JBS diodes. 2D device simulations show that a grid spacing of 4 mum results in the most optimum trade-off between the on-state and off-state characteristics. JBS diodes with linear and honeycombed p(+) grids, Schottky diodes and implanted PiN diodes fabricated alongside show that while IH-SIC JBS diodes behave similar to Schottky diodes in the on-state and switching characteristics, they show reverse characteristics similar to PiN diodes. Measurements on 4H-SiC JBS diodes indicate that the reverse recovery time (tau (rr)) and associated losses are near zero even at a rev. dI/dt of 75 A/mu sec. Based on measured waveforms, detailed loss models on diode switching were established for a high frequency switching power supply efficiency evaluation. A DC/DC converter efficiency improvements of 3-6% were obtained over the fastest, lower blocking voltage silicon diode when operated in the 100-200 kHz range.

引用

页码：101 / 104

页数：4