A super cut-off CMOS (SCCMOS) scheme for 0.5-V supply voltage with picoampere stand-by current

被引：124

作者：

Kawaguchi, H ^{[1
]}

Nose, K ^{[1
]}

Sakurai, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo 1068558, Japan

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2000年 / 35卷 / 10期

基金：

日本学术振兴会;

关键词：

DTMOS; leakage current; low power; low voltage; MTCMOS; stand-by current; VTCMOS;

D O I：

10.1109/4.871328

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A super cut-off CMOS (SCCMOS) scheme is proposed and demonstrated by measurement to achieve high-speed and low stand-by current CMOS VLSIs in sub-1-V supply voltage regime. By overdriving the gate of a cut-off MOSFET, the SCCMOS suppresses leakage current below 1 pA per logic gate in a stand-by mode while high-speed operation in an active mode is possible with low-threshold voltage of 0.1-0.2 V, The SCCMOS pushes the low-voltage operation limit 0.2 V further down compared with conventional schemes while maintaining the same stand-by current level.

引用

页码：1498 / 1501

页数：4