Resistance relaxation resulting from current diffusion in superconducting thin films

被引：16

作者：

Zeng, ZY ^{[1
]}

Yao, XX

Qin, MJ

Ge, Y

Ren, C

Ding, SY

Ma, LP

Li, HC

Li, L

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Dept Phys, Nanjing 210093, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100080, Peoples R China

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1997年 / 291卷 / 3-4期

关键词：

D O I：

10.1016/S0921-4534(97)01654-7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The current diffusion process in superconducting thin films was investigated numerically. The attention was concentrated on the influence of current diffusion on experimental results of transport measurements. It was found that the voltage and the resistance of the film sample in transport measurements were time dependent. The calculated relaxation curves of resistance differed obviously from those observed in magnetic relaxation measurements. Transport measurements on a GdBawCu3O7 thin film were carried out to examine our numerical investigation. Good agreement between the experimental results and our calculation was obtained. (C) 1997 Elsevier Science B.V.

引用

页码：229 / 234

页数：6

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